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SI5484DU-T1-E3

SI5484DU-T1-E3

SI5484DU-T1-E3

Vishay Siliconix

MOSFET N-CH 20V 12A PPAK CHIPFET

SOT-23

SI5484DU-T1-E3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® ChipFET™ Single
Supplier Device Package PowerPAK® ChipFet Single
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series TrenchFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 3.1W Ta 31W Tc
Element Configuration Single
Turn On Delay Time 5 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 16mOhm @ 7.6A, 4.5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 10V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
Rise Time 15ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 12A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
Input Capacitance 1.6nF
Drain to Source Resistance 16mOhm
Rds On Max 16 mΩ
Height 750μm
Length 3mm
Width 1.9mm
RoHS Status ROHS3 Compliant

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