SI5856DC-T1-E3

new-10%

Manufacturer part number:SI5856DC-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 20V 4.4A 1206-8

Case Package:SOT-23

Datasheet:SI5856DC-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
Series	TrenchFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Additional Feature	ULTRA-LOW RESISTANCE
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1.1W Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.1W
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	40m Ω @ 4.4A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Current - Continuous Drain (Id) @ 25°C	4.4A Ta
Gate Charge (Qg) (Max) @ Vgs	7.5nC @ 4.5V
Rise Time	36ns
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	36 ns
Turn-Off Delay Time	30 ns
Continuous Drain Current (ID)	5.9A
Gate to Source Voltage (Vgs)	8V
Drain Current-Max (Abs) (ID)	4.4A
Drain-source On Resistance-Max	0.04Ohm
Drain to Source Breakdown Voltage	20V
FET Feature	Schottky Diode (Isolated)
RoHS Status	ROHS3 Compliant