SI6463BDQ-T1-E3

new-10%

Manufacturer part number:SI6463BDQ-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 20V 6.2A 8-TSSOP

Case Package:SOT-23

Datasheet:SI6463BDQ-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-TSSOP (0.173, 4.40mm Width)
Number of Pins	8
Packaging	Cut Tape (CT)
Published	2008
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	15mOhm
Terminal Finish	Matte Tin (Sn)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Subcategory	Other Transistors
Max Power Dissipation	1.05W
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	8
Number of Elements	1
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.05W
Turn On Delay Time	35 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	15m Ω @ 7.4A, 4.5V
Vgs(th) (Max) @ Id	800mV @ 250μA
Current - Continuous Drain (Id) @ 25°C	6.2A Ta
Gate Charge (Qg) (Max) @ Vgs	60nC @ 5V
Rise Time	40ns
Drain to Source Voltage (Vdss)	20V
Fall Time (Typ)	40 ns
Turn-Off Delay Time	190 ns
Continuous Drain Current (ID)	-7.4A
Gate to Source Voltage (Vgs)	8V
Drain Current-Max (Abs) (ID)	6.2A
Drain to Source Breakdown Voltage	-20V
Height	1.0414mm
Length	4.4958mm
Width	3.0988mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free