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SI7194DP-T1-GE3

SI7194DP-T1-GE3

SI7194DP-T1-GE3

Vishay Siliconix

MOSFET N-CH 25V 60A PPAK SO-8

SOT-23

SI7194DP-T1-GE3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Number of Pins 8
Supplier Device Package PowerPAK® SO-8
Weight 506.605978mg
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Series TrenchFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 5.4W Ta 83W Tc
Turn On Delay Time 46 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.6V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6590pF @ 15V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Gate Charge (Qg) (Max) @ Vgs 145nC @ 10V
Rise Time 25ns
Drain to Source Voltage (Vdss) 25V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 40 ns
Turn-Off Delay Time 72 ns
Continuous Drain Current (ID) 60A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 25V
Input Capacitance 6.59nF
Drain to Source Resistance 2mOhm
Rds On Max 2 mΩ
Height 1.04mm
Length 4.9mm
Width 5.89mm
Radiation Hardening No
RoHS Status ROHS3 Compliant

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