SI7212DN-T1-GE3

new-10%

Manufacturer part number:SI7212DN-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 2N-CH 30V 4.9A 1212-8

Case Package:SOT-23

Datasheet:SI7212DN-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® 1212-8 Dual
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2015
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Max Power Dissipation	1.3W
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	SI7212
Pin Count	8
JESD-30 Code	S-XDSO-C6
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.3W
Case Connection	DRAIN
Turn On Delay Time	10 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	36m Ω @ 6.8A, 10V
Vgs(th) (Max) @ Id	1.6V @ 250μA
Gate Charge (Qg) (Max) @ Vgs	11nC @ 4.5V
Rise Time	12ns
Drain to Source Voltage (Vdss)	30V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	30 ns
Continuous Drain Current (ID)	4.9A
Gate to Source Voltage (Vgs)	12V
Drain-source On Resistance-Max	0.036Ohm
Drain to Source Breakdown Voltage	30V
Avalanche Energy Rating (Eas)	5 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Radiation Hardening	No
RoHS Status	ROHS3 Compliant