SI7218DN-T1-E3

new-10%

Manufacturer part number:SI7218DN-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET 30V 24A 23W

Case Package:SOT-23

Datasheet:SI7218DN-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® 1212-8 Dual
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	25mOhm
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Powers
Max Power Dissipation	23W
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	SI7218
Pin Count	8
JESD-30 Code	S-XDSO-C6
Number of Elements	2
Number of Channels	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	23W
Case Connection	DRAIN
Turn On Delay Time	15 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	25m Ω @ 8A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	700pF @ 15V
Current - Continuous Drain (Id) @ 25°C	24A
Gate Charge (Qg) (Max) @ Vgs	17nC @ 10V
Rise Time	12ns
Fall Time (Typ)	10 ns
Turn-Off Delay Time	10 ns
Continuous Drain Current (ID)	8A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	8A
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	35A
Avalanche Energy Rating (Eas)	5 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Standard
Height	1.04mm
Length	3.05mm
Width	3.05mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free