SI7368DP-T1-GE3

new-10%

Manufacturer part number:SI7368DP-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 20V 20A 5.0W 5.5mohm @ 10V

Case Package:SOT-23

Datasheet:SI7368DP-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Supplier Device Package	PowerPAK® SO-8
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	5.5mOhm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	1.7W Ta
Element Configuration	Single
Power Dissipation	1.7W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	5.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	1.8V @ 250μA
Current - Continuous Drain (Id) @ 25°C	13A Ta
Gate Charge (Qg) (Max) @ Vgs	25nC @ 4.5V
Rise Time	20ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
Fall Time (Typ)	20 ns
Turn-Off Delay Time	65 ns
Continuous Drain Current (ID)	13A
Gate to Source Voltage (Vgs)	16V
Drain to Source Breakdown Voltage	20V
Drain to Source Resistance	5.5mOhm
Rds On Max	5.5 mΩ
RoHS Status	ROHS3 Compliant