SI7384DP-T1-GE3

new-10%

Manufacturer part number:SI7384DP-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 30V 18A 5.0W 8.5mohm @ 10V

Case Package:SOT-23

Datasheet:SI7384DP-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Weight	506.605978mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	8
JESD-30 Code	R-XDSO-C8
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1.8W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	10 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8.5m Ω @ 18A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Current - Continuous Drain (Id) @ 25°C	11A Ta
Gate Charge (Qg) (Max) @ Vgs	18nC @ 4.5V
Rise Time	13ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	13 ns
Turn-Off Delay Time	45 ns
Continuous Drain Current (ID)	11A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0085Ohm
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	50A
Avalanche Energy Rating (Eas)	32 mJ
Height	1.04mm
Length	4.9mm
Width	5.89mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant