SI7392DP-T1-E3

new-10%

Manufacturer part number:SI7392DP-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 30V 9A PPAK SO-8

Case Package:SOT-23

Datasheet:SI7392DP-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
JESD-30 Code	R-XDSO-C5
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1.8W Ta
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	9.75m Ω @ 15A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Current - Continuous Drain (Id) @ 25°C	9A Ta
Gate Charge (Qg) (Max) @ Vgs	15nC @ 4.5V
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	9A
Drain-source On Resistance-Max	0.00975Ohm
Pulsed Drain Current-Max (IDM)	50A
DS Breakdown Voltage-Min	30V
Avalanche Energy Rating (Eas)	45 mJ
RoHS Status	ROHS3 Compliant