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SI7445DP-T1-GE3

SI7445DP-T1-GE3

SI7445DP-T1-GE3

Vishay Siliconix

MOSFET 20V 19A 5.4W 7.7mohm @ 4.5V

SOT-23

SI7445DP-T1-GE3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® 1212-8
Number of Pins 8
Supplier Device Package PowerPAK® 1212-8
Weight 506.605978mg
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series TrenchFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 1.9W Ta
Element Configuration Single
Turn On Delay Time 40 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 7.7mOhm @ 19A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Current - Continuous Drain (Id) @ 25°C 12A Ta
Gate Charge (Qg) (Max) @ Vgs 140nC @ 5V
Rise Time 45ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 190 ns
Turn-Off Delay Time 400 ns
Continuous Drain Current (ID) -12A
Gate to Source Voltage (Vgs) 8V
Drain to Source Resistance 7.7mOhm
Rds On Max 7.7 mΩ
Nominal Vgs -1 V
Height 1.04mm
Length 4.9mm
Width 5.89mm
RoHS Status ROHS3 Compliant

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