SI7485DP-T1-E3

new-10%

Manufacturer part number:SI7485DP-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 20V 12.5A PPAK SO-8

Case Package:SOT-23

Datasheet:SI7485DP-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Number of Pins	8
Packaging	Cut Tape (CT)
Published	2011
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Resistance	7.3mOhm
Terminal Finish	Matte Tin (Sn)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Subcategory	Other Transistors
Max Power Dissipation	1.8W
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
JESD-30 Code	R-XDSO-C5
Number of Elements	1
Voltage	20V
Element Configuration	Single
Current	20A
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.8W
Case Connection	DRAIN
Turn On Delay Time	80 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	7.3m Ω @ 20A, 4.5V
Vgs(th) (Max) @ Id	900mV @ 1mA
Current - Continuous Drain (Id) @ 25°C	12.5A Ta
Gate Charge (Qg) (Max) @ Vgs	150nC @ 5V
Rise Time	140ns
Fall Time (Typ)	170 ns
Turn-Off Delay Time	360 ns
Continuous Drain Current (ID)	-20A
Threshold Voltage	-900mV
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	20V
Nominal Vgs	-900 mV
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free