SI7802DN-T1-GE3

new-10%

Manufacturer part number:SI7802DN-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 250V 1.24A 1212-8

Case Package:SOT-23

Datasheet:SI7802DN-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® 1212-8
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
JESD-30 Code	S-XDSO-C5
Number of Elements	1
Power Dissipation-Max	1.5W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.5W
Case Connection	DRAIN
Turn On Delay Time	10 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	435m Ω @ 1.95A, 10V
Vgs(th) (Max) @ Id	3.6V @ 250μA
Current - Continuous Drain (Id) @ 25°C	1.24A Ta
Gate Charge (Qg) (Max) @ Vgs	21nC @ 10V
Rise Time	10ns
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	21 ns
Continuous Drain Current (ID)	1.24A
Threshold Voltage	2.4V
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.435Ohm
Drain to Source Breakdown Voltage	250V
Pulsed Drain Current-Max (IDM)	8A
Avalanche Energy Rating (Eas)	0.3 mJ
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant