SI7852DP-T1-E3 Overview

The drain current is the maximum continuous current the device can conduct, and this device has 12.5A continuous drain current (ID).With a drain-source breakdown voltage of 80V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 80V.In this device, the drain current is 7.6A, which is the maximum continuous current the device can conduct.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 40 ns.In terms of pulsed drain current, it has a maximum of 50A, which is its maximum rated peak drain current.A turn-on delay time of 17 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 2V.By using drive voltage (6V 10V), this device helps reduce its overall power consumption.

SI7852DP-T1-E3 Features

a continuous drain current (ID) of 12.5A
a drain-to-source breakdown voltage of 80V voltage
the turn-off delay time is 40 ns
based on its rated peak drain current 50A.
a threshold voltage of 2V

SI7852DP-T1-E3 Applications

There are a lot of Vishay Siliconix SI7852DP-T1-E3 applications of single MOSFETs transistors.

• Micro Solar Inverter
• Motor control
• PFC stages, hard switching PWM stages and resonant switching
• Server power supplies
• Synchronous Rectification
• Lighting, Server, Telecom and UPS.
• General Purpose Interfacing Switch
• LCD/LED/ PDP TV Lighting
• DC-to-DC converters
• LCD/LED TV