SI8415DB-T1-E1

new-10%

Manufacturer part number:SI8415DB-T1-E1

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 12V 5.3A 2X2 4-MFP

Case Package:SOT-23

Datasheet:SI8415DB-T1-E1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	4-XFBGA, CSPBGA
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	ULTRA LOW RESISTANCE
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Terminal Form	BALL
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	4
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1.47W Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.47W
Turn On Delay Time	15 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	37m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Current - Continuous Drain (Id) @ 25°C	5.3A Ta
Gate Charge (Qg) (Max) @ Vgs	30nC @ 4.5V
Rise Time	32ns
Drain to Source Voltage (Vdss)	12V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	32 ns
Turn-Off Delay Time	180 ns
Continuous Drain Current (ID)	-7.3A
Threshold Voltage	-1V
Gate to Source Voltage (Vgs)	8V
Drain Current-Max (Abs) (ID)	5.3A
Drain-source On Resistance-Max	0.037Ohm
Pulsed Drain Current-Max (IDM)	25A
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant