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SI8416DB-T1-GE3

SI8416DB-T1-GE3

SI8416DB-T1-GE3

Vishay Siliconix

MOSFET N-CH 8V 16A MICRO

SOT-23

SI8416DB-T1-GE3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-UFBGA
Number of Pins 6
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2.77W Ta 13W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 23m Ω @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1470pF @ 4V
Current - Continuous Drain (Id) @ 25°C 16A Tc
Gate Charge (Qg) (Max) @ Vgs 26nC @ 4.5V
Drain to Source Voltage (Vdss) 8V
Drive Voltage (Max Rds On,Min Rds On) 1.2V 4.5V
Vgs (Max) ±5V
Continuous Drain Current (ID) 16A
RoHS Status ROHS3 Compliant

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