SI8467DB-T2-E1

new-10%

Manufacturer part number:SI8467DB-T2-E1

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 20V MICROFOOT

Case Package:SOT-23

Datasheet:SI8467DB-T2-E1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	4-XFBGA, CSPBGA
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2010
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Resistance	73MOhm
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Terminal Form	BALL
Number of Elements	1
Power Dissipation-Max	780mW Ta 1.8W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	25 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	73m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	475pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	21nC @ 10V
Rise Time	45ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	20 ns
Turn-Off Delay Time	50 ns
Continuous Drain Current (ID)	-3.7A
Gate to Source Voltage (Vgs)	-1.5V
DS Breakdown Voltage-Min	20V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free