SIA433EDJ-T1-GE3

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Manufacturer part number:SIA433EDJ-T1-GE3

Manufacturer:Vishay Siliconix

Description:SIA Series P-Channel 20 V 15 mO 19 W Surface Mount MOSFET - POWERPAK SC-70-6L

Case Package:SOT-23

Datasheet:SIA433EDJ-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SC-70-6
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2015
Series	TrenchFET®
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	15mOhm
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	6
JESD-30 Code	S-XDSO-N3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	3.5W Ta 19W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.5W
Case Connection	DRAIN
Turn On Delay Time	710 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	18m Ω @ 7.6A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 250μA
Current - Continuous Drain (Id) @ 25°C	12A Tc
Gate Charge (Qg) (Max) @ Vgs	75nC @ 8V
Rise Time	1.7μs
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	3.2 μs
Turn-Off Delay Time	6 μs
Continuous Drain Current (ID)	-12A
Threshold Voltage	-500mV
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	-20V
Pulsed Drain Current-Max (IDM)	50A
Height	750μm
Length	2.05mm
Width	2.05mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free