SIE802DF-T1-GE3

new-10%

Manufacturer part number:SIE802DF-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 30V 60A POLARPAK

Case Package:SOT-23

Datasheet:SIE802DF-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	10-PolarPAK® (L)
Number of Pins	10
Supplier Device Package	10-PolarPAK® (L)
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Channels	1
Power Dissipation-Max	5.2W Ta 125W Tc
Element Configuration	Single
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	1.9mOhm @ 23.6A, 10V
Vgs(th) (Max) @ Id	2.7V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	7000pF @ 15V
Current - Continuous Drain (Id) @ 25°C	60A Tc
Gate Charge (Qg) (Max) @ Vgs	160nC @ 10V
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	42.7A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Input Capacitance	7nF
Drain to Source Resistance	1.9mOhm
Rds On Max	1.9 mΩ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant