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SIE848DF-T1-GE3

SIE848DF-T1-GE3

SIE848DF-T1-GE3

Vishay Siliconix

MOSFET 30V 211A 125W 1.6mohm @ 10V

SOT-23

SIE848DF-T1-GE3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 10-PolarPAK® (L)
Number of Pins 10
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2013
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Pin Count10
JESD-30 Code R-PDSO-N4
Number of Elements 1
Power Dissipation-Max 5.2W Ta 125W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation125W
Case Connection DRAIN SOURCE
Turn On Delay Time45 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.6m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6100pF @ 15V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Gate Charge (Qg) (Max) @ Vgs 138nC @ 10V
Rise Time30ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 40 ns
Turn-Off Delay Time 70 ns
Continuous Drain Current (ID) 43A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0022Ohm
Drain to Source Breakdown Voltage 30V
Nominal Vgs 1.8 V
Radiation HardeningNo
REACH SVHC Unknown
RoHS StatusROHS3 Compliant
In-Stock:1189 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$10.002274$10.002274
10$9.436108$94.36108
100$8.901988$890.1988
500$8.398103$4199.0515
1000$7.922738$7922.738

About SIE848DF-T1-GE3

The SIE848DF-T1-GE3 from Vishay Siliconix is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET 30V 211A 125W 1.6mohm @ 10V.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the SIE848DF-T1-GE3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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