SIHG33N60EF-GE3

new-10%

Manufacturer part number:SIHG33N60EF-GE3

Manufacturer:Vishay Siliconix

Description:VISHAY SIHG33N60EF-GE3 MOSFET, N CHANNEL, 600V, 33A, TO-247AC-3

Case Package:SOT-23

Datasheet:SIHG33N60EF-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2014
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	278W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	28 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	98m Ω @ 16.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3454pF @ 100V
Current - Continuous Drain (Id) @ 25°C	33A Tc
Gate Charge (Qg) (Max) @ Vgs	155nC @ 10V
Rise Time	43ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	48 ns
Turn-Off Delay Time	161 ns
Continuous Drain Current (ID)	33A
Threshold Voltage	4V
JEDEC-95 Code	TO-247AC
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.098Ohm
Drain to Source Breakdown Voltage	600V
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant