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SIHG47N60E-GE3

SIHG47N60E-GE3

SIHG47N60E-GE3

Vishay Siliconix

MOSFET (Metal Oxide) N-Channel Tube 64mOhm @ 24A, 10V ±30V 9620pF @ 100V 220nC @ 10V 600V TO-247-3

SOT-23

SIHG47N60E-GE3 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Supplier Device Package TO-247AC
Weight 38.000013g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 64mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 357W Tc
Element Configuration Single
Power Dissipation 357W
Turn On Delay Time 24 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 64mOhm @ 24A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 9620pF @ 100V
Current - Continuous Drain (Id) @ 25°C 47A Tc
Gate Charge (Qg) (Max) @ Vgs 220nC @ 10V
Rise Time 11ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 94 ns
Continuous Drain Current (ID) 47A
Threshold Voltage 2.5V
Gate to Source Voltage (Vgs) 20V
Input Capacitance 9.62nF
Drain to Source Resistance 64mOhm
Rds On Max 64 mΩ
Height 20.7mm
Length 15.87mm
Width 5.31mm
REACH SVHC Unknown
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $10.699755 $10.699755
10 $10.094109 $100.94109
100 $9.522744 $952.2744
500 $8.983721 $4491.8605
1000 $8.475209 $8475.209
SIHG47N60E-GE3 Product Details

SIHG47N60E-GE3 Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 9620pF @ 100V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 47A amps.It is [94 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 64mOhm.A turn-on delay time of 24 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 2.5V.To operate this transistor, you will need a 600V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

SIHG47N60E-GE3 Features


a continuous drain current (ID) of 47A
the turn-off delay time is 94 ns
single MOSFETs transistor is 64mOhm
a threshold voltage of 2.5V
a 600V drain to source voltage (Vdss)


SIHG47N60E-GE3 Applications


There are a lot of Vishay Siliconix
SIHG47N60E-GE3 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies

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