SIR638DP-T1-RE3

new-10%

Manufacturer part number:SIR638DP-T1-RE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 40V 100A POWERPAKSO

Case Package:SOT-23

Datasheet:SIR638DP-T1-RE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Supplier Device Package	PowerPAK® SO-8
Manufacturer Package Identifier	S17-0173-Single
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	TrenchFET® Gen IV
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Channels	1
Power Dissipation-Max	104W Tc
Power Dissipation	6.25W
Turn On Delay Time	20 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	0.88mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	10500pF @ 20V
Current - Continuous Drain (Id) @ 25°C	100A Tc
Gate Charge (Qg) (Max) @ Vgs	204nC @ 10V
Drain to Source Voltage (Vdss)	40V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	+20V, -16V
Turn-Off Delay Time	52 ns
Continuous Drain Current (ID)	62.8A
Drain to Source Breakdown Voltage	40V
Max Junction Temperature (Tj)	150°C
Drain to Source Resistance	730μOhm
Height	1.17mm