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SIRC10DP-T1-GE3

SIRC10DP-T1-GE3

SIRC10DP-T1-GE3

Vishay Siliconix

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 3.5m Ω @ 10A, 10V +20V, -16V 1873pF @ 15V 36nC @ 10V PowerPAK® SO-8

SOT-23

SIRC10DP-T1-GE3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Manufacturer Package Identifier S17-0173-Single
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series TrenchFET® Gen IV
Published 2018
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Channels 1
Power Dissipation-Max 43W Tc
Power Dissipation 3.6W
Turn On Delay Time 10 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.5m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1873pF @ 15V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) +20V, -16V
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 23.9A
Drain to Source Breakdown Voltage 30V
Max Junction Temperature (Tj) 150°C
FET Feature Schottky Diode (Body)
Height 1.17mm
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.740880 $3.74088
10 $3.529132 $35.29132
100 $3.329370 $332.937
500 $3.140915 $1570.4575
1000 $2.963127 $2963.127
SIRC10DP-T1-GE3 Product Details

SIRC10DP-T1-GE3 Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1873pF @ 15V.This device conducts a continuous drain current (ID) of 23.9A, which is the maximum continuous current transistor can conduct.Using VGS=30V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 30V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 15 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 10 ns.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).

SIRC10DP-T1-GE3 Features


a continuous drain current (ID) of 23.9A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 15 ns


SIRC10DP-T1-GE3 Applications


There are a lot of Vishay Siliconix
SIRC10DP-T1-GE3 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching

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