SIZ322DT-T1-GE3

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Manufacturer part number:SIZ322DT-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 2 N-CH 25V 30A 8-POWER33

Case Package:SOT-23

Datasheet:SIZ322DT-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mounting Type	Surface Mount
Package / Case	8-PowerWDFN
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2018
Series	TrenchFET® Gen IV
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Number of Channels	2
Power Dissipation	3.7W
Turn On Delay Time	10 ns
Power - Max	16.7W Tc
FET Type	2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs	6.35m Ω @ 15A, 10V
Vgs(th) (Max) @ Id	2.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	950pF @ 12.5V
Current - Continuous Drain (Id) @ 25°C	30A Tc
Gate Charge (Qg) (Max) @ Vgs	20.1nC @ 10V
Turn-Off Delay Time	15 ns
Continuous Drain Current (ID)	19A
Drain to Source Breakdown Voltage	25V
Max Junction Temperature (Tj)	150°C
FET Feature	Standard
Height	800μm
RoHS Status	ROHS3 Compliant