SQ4532AEY-T1_GE3

new-10%

Manufacturer part number:SQ4532AEY-T1_GE3

Manufacturer:Vishay Siliconix

Description:Automotive N-and P-Channel 30 V (D-S) 175 °C MOSFET

Case Package:SOT-23

Datasheet:SQ4532AEY-T1_GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Series	Automotive, AEC-Q101, TrenchFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PDSO-G8
Number of Elements	2
Number of Channels	2
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.3W
FET Type	N and P-Channel
Rds On (Max) @ Id, Vgs	31m Ω @ 4.9A, 10V, 70m Ω @ 3.5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	535pF @ 15V 528pF @ 15V
Current - Continuous Drain (Id) @ 25°C	7.3A Tc 5.3A Tc
Gate Charge (Qg) (Max) @ Vgs	7.8nC @ 10V, 10.2nC @ 10V
Drain to Source Voltage (Vdss)	30V
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	7.3A
Drain-source On Resistance-Max	0.031Ohm
DS Breakdown Voltage-Min	30V
FET Technology	METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)	175°C
FET Feature	Standard
Feedback Cap-Max (Crss)	53 pF
Height	1.75mm
RoHS Status	RoHS Compliant