SQD50P04-09L_GE3

new-10%

Manufacturer part number:SQD50P04-09L_GE3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 40V 50A TO252

Case Package:SOT-23

Datasheet:SQD50P04-09L_GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Weight	1.437803g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Pin Count	4
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	136W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	136W
Case Connection	DRAIN
Turn On Delay Time	13 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	9.4m Ω @ 17A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	6675pF @ 20V
Current - Continuous Drain (Id) @ 25°C	50A Tc
Gate Charge (Qg) (Max) @ Vgs	155nC @ 10V
Rise Time	15ns
Drain to Source Voltage (Vdss)	40V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	19 ns
Turn-Off Delay Time	61 ns
Continuous Drain Current (ID)	50A
Threshold Voltage	-1.5V
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0094Ohm
DS Breakdown Voltage-Min	40V
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant