SUP50N10-21P-GE3

new-10%

Manufacturer part number:SUP50N10-21P-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 100V 50A TO220AB

Case Package:SOT-23

Datasheet:SUP50N10-21P-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	15 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Weight	6.000006g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2011
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	21mOhm
Terminal Finish	PURE MATTE TIN
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	3.1W Ta 125W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	10 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	21m Ω @ 10A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2055pF @ 50V
Current - Continuous Drain (Id) @ 25°C	50A Tc
Gate Charge (Qg) (Max) @ Vgs	68nC @ 10V
Rise Time	20ns
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	14 ns
Turn-Off Delay Time	22 ns
Continuous Drain Current (ID)	50A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	60A
Avalanche Energy Rating (Eas)	80 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free