BUJ103AD,118 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from WeEn Semiconductors stock available on our website
SOT-23
BUJ103AD,118 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Terminal Position
SINGLE
Terminal Form
GULL WING
Reach Compliance Code
not_compliant
Reference Standard
IEC-60134
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
80W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
13 @ 500mA 5V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
1V @ 600mA, 3A
Voltage - Collector Emitter Breakdown (Max)
400V
Current - Collector (Ic) (Max)
4A
Turn Off Time-Max (toff)
3650ns
Turn On Time-Max (ton)
600ns
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
7,500
$0.29810
$2.0867
BUJ103AD,118 Product Details
BUJ103AD,118 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 13 @ 500mA 5V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 600mA, 3A.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
BUJ103AD,118 Features
the DC current gain for this device is 13 @ 500mA 5V the vce saturation(Max) is 1V @ 600mA, 3A
BUJ103AD,118 Applications
There are a lot of WeEn Semiconductors BUJ103AD,118 applications of single BJT transistors.