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BUJ103AD,118

BUJ103AD,118

BUJ103AD,118

WeEn Semiconductors

BUJ103AD,118 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from WeEn Semiconductors stock available on our website

SOT-23

BUJ103AD,118 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Terminal Form GULL WING
Reach Compliance Code not_compliant
Reference Standard IEC-60134
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 80W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 13 @ 500mA 5V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 1V @ 600mA, 3A
Voltage - Collector Emitter Breakdown (Max) 400V
Current - Collector (Ic) (Max) 4A
Turn Off Time-Max (toff) 3650ns
Turn On Time-Max (ton) 600ns
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
7,500 $0.29810 $2.0867
BUJ103AD,118 Product Details

BUJ103AD,118 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 13 @ 500mA 5V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 600mA, 3A.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.

BUJ103AD,118 Features


the DC current gain for this device is 13 @ 500mA 5V
the vce saturation(Max) is 1V @ 600mA, 3A

BUJ103AD,118 Applications


There are a lot of WeEn Semiconductors BUJ103AD,118 applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

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