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BYR29X-800P

BYR29X-800P

BYR29X-800P

WeEn Semiconductors

Rail

SOT-23

BYR29X-800P Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
ECCN (US) EAR99
HTS 8541.10.00.80
Maximum DC Reverse Voltage (V) 800
Peak Reverse Repetitive Voltage (V) 800
Maximum Continuous Forward Current (A) 8
Peak Non-Repetitive Surge Current (A) 88
Peak Forward Voltage (V) 1.7
Peak Reverse Current (uA) 10
Peak Reverse Recovery Time (ns) 55
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 175
Supplier Package TO-220F
Military No
Mounting Through Hole
Package Height 15.8(Max)
Package Length 10.3(Max)
Package Width 4.6(Max)
PCB changed 2
Tab Tab
Packaging Rail
Type Switching Diode
Pin Count 2
Configuration Single
RoHS Status Yes with exemptions
BYR29X-800P Product Details

BYR29X-800P Overview


Datasheets indicate 1.7 as the peak forward voltage.RF diode consumes about 8 continuous forward current at any given time.RF diode must be operated wRF diodeh a DC reverse voltage less than 800 V.

BYR29X-800P Features


the forward peak voltage is 1.7


BYR29X-800P Applications


There are a lot of WeEn Semiconductors
BYR29X-800P applications of RF diodes.


  • Ultra high-speed switching
  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches
  • Low-loss, high-power limiters

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