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BYV29B-600PJ

BYV29B-600PJ

BYV29B-600PJ

WeEn Semiconductors

DIODE GEN PURP 600V 9A D2PAK

SOT-23

BYV29B-600PJ Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PackagingTape & Reel (TR)
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 10μA @ 600V
Voltage - Forward (Vf) (Max) @ If 1.3V @ 8A
Operating Temperature - Junction 175°C Max
Voltage - DC Reverse (Vr) (Max) 600V
Current - Average Rectified (Io) 9A
Reverse Recovery Time 75ns
RoHS StatusRoHS Compliant
In-Stock:2882 items

Pricing & Ordering

QuantityUnit PriceExt. Price

About BYV29B-600PJ

The BYV29B-600PJ from WeEn Semiconductors is a high-performance microcontroller designed for a wide range of embedded applications. This component features DIODE GEN PURP 600V 9A D2PAK.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the BYV29B-600PJ, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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