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WNSC401200CWQ

WNSC401200CWQ

WNSC401200CWQ

WeEn Semiconductors

SILICON CARBIDE POWER DIODE

SOT-23

WNSC401200CWQ Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Mounting Type Through Hole
Package / Case TO-247-3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Speed No Recovery Time > 500mA (Io)
Diode Type Silicon Carbide Schottky
Current - Reverse Leakage @ Vr 200μA @ 1200V
Voltage - Forward (Vf) (Max) @ If 1.75V @ 20A
Operating Temperature - Junction 175°C Max
Voltage - DC Reverse (Vr) (Max) 1200V
Current - Average Rectified (Io) 40A
Reverse Recovery Time 0ns
Capacitance @ Vr, F 810pF @ 1V 1MHz
RoHS StatusRoHS Compliant
In-Stock:764 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$11.95000$11.95
500$11.8305$5915.25
1000$11.711$11711
1500$11.5915$17387.25
2000$11.472$22944
2500$11.3525$28381.25

About WNSC401200CWQ

The WNSC401200CWQ from WeEn Semiconductors is a high-performance microcontroller designed for a wide range of embedded applications. This component features SILICON CARBIDE POWER DIODE.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the WNSC401200CWQ, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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