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ALD1115PAL

ALD1115PAL

ALD1115PAL

Advanced Linear Devices Inc.

MOSFET N/P-CH 10.6V 8DIP

SOT-23

ALD1115PAL Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case 8-DIP (0.300, 7.62mm)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature 0°C~70°C TJ
Packaging Tube
Published 2006
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Max Power Dissipation 500mW
Reach Compliance Code unknown
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 500mW
FET Type N and P-Channel Complementary
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1800 Ω @ 5V
Vgs(th) (Max) @ Id 1V @ 1μA
Input Capacitance (Ciss) (Max) @ Vds 3pF @ 5V
Drain to Source Voltage (Vdss) 10.6V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Continuous Drain Current (ID) 2mA
Gate to Source Voltage (Vgs) 13.2V
Drain-source On Resistance-Max 500Ohm
Drain to Source Breakdown Voltage -12V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $5.048754 $5.048754
10 $4.762976 $47.62976
100 $4.493373 $449.3373
500 $4.239031 $2119.5155
1000 $3.999086 $3999.086

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