FDD8424H

new-10%

FDD8424H

Manufacturer part number:FDD8424H

Manufacturer:ON Semiconductor

Description:Trans MOSFET N/P-CH 40V 9A/6.5A 5-Pin(4+Tab) TO-252 T/R

Case Package:SOT-23

Datasheet:FDD8424H Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 day ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-5, DPak (4 Leads + Tab), TO-252AD
Number of Pins	5
Weight	260.37mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2014
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Resistance	24MOhm
Terminal Finish	Tin (Sn)
Subcategory	Other Transistors
Max Power Dissipation	3.1W
Terminal Position	SINGLE
Terminal Form	GULL WING
Base Part Number	FDD8424
JESD-30 Code	R-PSSO-G4
Number of Elements	2
Number of Channels	2
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.1W
Case Connection	DRAIN
Turn On Delay Time	7 ns
Power - Max	1.3W
FET Type	N and P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	24m Ω @ 9A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1000pF @ 20V
Current - Continuous Drain (Id) @ 25°C	9A 6.5A
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Rise Time	3ns
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Fall Time (Typ)	3 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	9A
Threshold Voltage	1.7V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	9A
Drain to Source Breakdown Voltage	40V
FET Technology	METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)	150°C
FET Feature	Logic Level Gate
Height	2.517mm
Length	6.73mm
Width	6.22mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free