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ALD1117PAL

ALD1117PAL

ALD1117PAL

Advanced Linear Devices Inc.

MOSFET 2P-CH 10.6V 8DIP

SOT-23

ALD1117PAL Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case 8-DIP (0.300, 7.62mm)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature 0°C~70°C TJ
Packaging Tube
Published 2005
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Max Power Dissipation 500mW
Reach Compliance Code unknown
Number of Elements 2
Configuration COMMON SUBSTRATE, 2 ELEMENTS
Operating Mode ENHANCEMENT MODE
Power Dissipation 500mW
FET Type 2 P-Channel (Dual) Matched Pair
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1800 Ω @ 5V
Vgs(th) (Max) @ Id 1V @ 1μA
Input Capacitance (Ciss) (Max) @ Vds 3pF @ 5V
Drain to Source Voltage (Vdss) 10.6V
Continuous Drain Current (ID) 2mA
Gate to Source Voltage (Vgs) -13.2V
Drain to Source Breakdown Voltage -12V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $4.869000 $4.869
10 $4.593396 $45.93396
100 $4.333393 $433.3393
500 $4.088106 $2044.053
1000 $3.856704 $3856.704

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