FDS8978 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website
SOT-23
FDS8978 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Weight
187mg
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2001
Series
PowerTrench®
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Resistance
18MOhm
Max Power Dissipation
1.6W
Number of Elements
2
Element Configuration
Dual
Power Dissipation
1.6W
Turn On Delay Time
7 ns
FET Type
2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs
18m Ω @ 7.5A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1270pF @ 15V
Gate Charge (Qg) (Max) @ Vgs
26nC @ 10V
Rise Time
37ns
Drain to Source Voltage (Vdss)
30V
Fall Time (Typ)
37 ns
Turn-Off Delay Time
48 ns
Continuous Drain Current (ID)
7.5A
Threshold Voltage
2.5V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
FET Feature
Logic Level Gate
Height
1.5mm
Length
5mm
Width
4mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
FDS8978 Product Details
FDS8978 Description
The N-channel MOSFET is designed to improve the overall efficiency of DC/DC converters using synchronous or conventional switched pulse width modulation controllers. It has been optimized for low gate charge, low RDS and fast switching speed.
FDS8978 Features
? rDS(on) = 18 m, VGS = 10 V, ID = 7.5 A
? rDS(on) = 21 m, VGS = 4.5 V, ID = 6.9 A
? High Performance Trench Technology for Extremely Low rDS(on)
? Low Gate Charge
? High Power and Current Handling Capability
? 100% Rg Tested
? These Devices are Pb?Free and are RoHS Compliant