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AOI1N60

AOI1N60

AOI1N60

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 1.3A TO251A

SOT-23

AOI1N60 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Stub Leads, IPak
Operating Temperature -50°C~150°C TJ
Packaging Tube
Published 2011
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 45W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 9 Ω @ 650mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 160pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.3A Tc
Gate Charge (Qg) (Max) @ Vgs 8nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 1.3A
RoHS Status RoHS Compliant

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