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AON2701_001

AON2701_001

AON2701_001

Alpha & Omega Semiconductor Inc.

MOSFET P-CH W/DIODE DFN

SOT-23

AON2701_001 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case 6-WDFN Exposed Pad
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 1.5W Ta
FET Type P-Channel
Rds On (Max) @ Id, Vgs 120m Ω @ 3A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 700pF @ 10V
Current - Continuous Drain (Id) @ 25°C 3A Ta
Gate Charge (Qg) (Max) @ Vgs 6.5nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
FET Feature Schottky Diode (Body)

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