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STP6NM60N

STP6NM60N

STP6NM60N

STMicroelectronics

Trans MOSFET N-CH 600V 4.6A 3-Pin(3+Tab) TO-220 Tube

SOT-23

STP6NM60N Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series MDmesh™ II
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 920mOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Base Part Number STP6N
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Power Dissipation-Max 45W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 45W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 920m Ω @ 2.3A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 420pF @ 50V
Current - Continuous Drain (Id) @ 25°C 4.6A Tc
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Rise Time 8ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 4.6A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 600V
Avalanche Energy Rating (Eas) 65 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price

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