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AON6560

AON6560

AON6560

Alpha & Omega Semiconductor Inc.

MOSFET N-CH

SOT-23

AON6560 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerSMD, Flat Leads
Supplier Device Package 8-DFN (5x6)
Manufacturer Package Identifier DFN5x6_8L_EP1_P
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 7.3W Ta 208W Tc
Power Dissipation 7.3W
Turn On Delay Time 16 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 0.62mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 11500pF @ 15V
Current - Continuous Drain (Id) @ 25°C 84A Ta 200A Tc
Gate Charge (Qg) (Max) @ Vgs 325nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 115.5 ns
Continuous Drain Current (ID) 200A
Threshold Voltage 1.4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Input Capacitance 11.5nF
Max Junction Temperature (Tj) 150°C
Drain to Source Resistance 550μOhm
Rds On Max 680 mΩ
Height 1mm
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price

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