IRF510PBF

new-10%

Manufacturer part number:IRF510PBF

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 100V 5.6A TO-220AB

Case Package:SOT-23

Datasheet:IRF510PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Supplier Device Package	TO-220AB
Weight	6.000006g
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2011
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	540mOhm
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Voltage - Rated DC	100V
Technology	MOSFET (Metal Oxide)
Current Rating	5.6A
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	43W Tc
Element Configuration	Single
Power Dissipation	43W
Turn On Delay Time	6.9 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	540mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	180pF @ 25V
Current - Continuous Drain (Id) @ 25°C	5.6A Tc
Gate Charge (Qg) (Max) @ Vgs	8.3nC @ 10V
Rise Time	16ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	9.4 ns
Turn-Off Delay Time	15 ns
Continuous Drain Current (ID)	5.6A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Input Capacitance	180pF
Recovery Time	200 ns
Drain to Source Resistance	540mOhm
Rds On Max	540 mΩ
Nominal Vgs	4 V
Height	9.01mm
Length	10.41mm
Width	4.7mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free