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AOT1100L

AOT1100L

AOT1100L

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 100V 8A TO220

SOT-23

AOT1100L Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2010
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 2.1W Ta 500W Tc
Power Dissipation 500W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 12m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 3.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4833pF @ 25V
Current - Continuous Drain (Id) @ 25°C 8A Ta 130A Tc
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 130A
Gate to Source Voltage (Vgs) 20V
RoHS Status RoHS Compliant

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