2SK4209

new-10%

Manufacturer part number:2SK4209

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 800V 12A TO-3PB

Case Package:SOT-23

Datasheet:2SK4209 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tray
Published	2005
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
Additional Feature	HIGH RELIABILITY
HTS Code	8541.29.00.95
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Pin Count	3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.5W Ta 190W Tc
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	27 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.08 Ω @ 6A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	1500pF @ 30V
Current - Continuous Drain (Id) @ 25°C	12A Ta
Gate Charge (Qg) (Max) @ Vgs	75nC @ 10V
Rise Time	72ns
Drain to Source Voltage (Vdss)	800V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	77 ns
Turn-Off Delay Time	260 ns
Continuous Drain Current (ID)	12A
Gate to Source Voltage (Vgs)	30V
Pulsed Drain Current-Max (IDM)	24A
DS Breakdown Voltage-Min	800V
Avalanche Energy Rating (Eas)	410 mJ
Radiation Hardening	No
RoHS Status	RoHS Compliant