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BLA0912-250R

BLA0912-250R

BLA0912-250R

Ampleon

BLA0912-250R datasheet pdf and Transistors - FETs, MOSFETs - RF product details from Ampleon stock available on our website

SOT-23

BLA0912-250R Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Package / Case SOT-502A
Supplier Device Package SOT502A
ECCN (US) EAR99
Channel Mode Enhancement
Number of Elements per Chip 1
Process Technology LDMOS
Maximum Drain Source Voltage (V) 75
Maximum Gate Source Voltage (V) ±22
Maximum VSWR 5
Maximum Drain Source Resistance (mOhm) 60(Typ)@9V
Typical Forward Transconductance (S) 9
Maximum Power Dissipation (mW) 700
Output Power (W) 250(Min)
Typical Power Gain (dB) 13
Maximum Frequency (MHz) 1215
Minimum Frequency (MHz) 960
Typical Drain Efficiency (%) 50
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 200
Supplier Package SOT-502A
Military No
Mounting Screw
Package Height 4.72(Max)
Package Length 34.16(Max)
Package Width 9.91(Max)
PCB changed 3
Package Bulk
Mfr Ampleon USA Inc.
Product Status Active
Series -
Part Status Obsolete
Voltage - Rated 75 V
Current Rating (Amps) 1µA
Frequency 960MHz ~ 1.215GHz
Pin Count 3
Configuration Single
Current - Test 150 mA
Transistor Type LDMOS
Gain 13dB
Channel Type N
Power - Output 250W
Noise Figure -
Voltage - Test 36 V
Mode of Operation TCAS|JTIDS|Mode-S
RoHS Status Supplier Unconfirmed

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