BLC10G18XS-360AVT

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Manufacturer part number:BLC10G18XS-360AVT

Manufacturer:Ampleon

Description:BLC10G18XS-360AVT datasheet pdf and Transistors - FETs, MOSFETs - RF product details from Ampleon stock available on our website

Case Package:SOT-23

Datasheet:BLC10G18XS-360AVT Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
ECCN (US)	EAR99
Channel Mode	Enhancement
Number of Elements per Chip	2
Process Technology	LDMOS
Maximum Drain Source Voltage (V)	65
Maximum Gate Source Voltage (V)	9
Maximum Gate Threshold Voltage (V)	2.5
Maximum VSWR	10
Maximum Gate Source Leakage Current (nA)	280
Maximum IDSS (uA)	2.8
Maximum Drain Source Resistance (mOhm)	[email protected]
Typical Forward Transconductance (S)	20
Output Power (W)	410(Typ)
Typical Power Gain (dB)	15.4
Maximum Frequency (MHz)	1880
Minimum Frequency (MHz)	1805
Typical Drain Efficiency (%)	50
Minimum Operating Temperature (°C)	-40
Maximum Operating Temperature (°C)	125
Supplier Package	DFM
Military	No
Mounting	Surface Mount
Package Height	4.52(Max)
Package Length	32.33(Max)
Package Width	10.23(Max)
PCB changed	7
Part Status	Active
Type	MOSFET
Pin Count	7
Configuration	Dual Common Source
Channel Type	N
Mode of Operation	1-Carrier W-CDMA