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BLC2425M10LS250

BLC2425M10LS250

BLC2425M10LS250

Ampleon

BLC2425M10LS250 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from Ampleon stock available on our website

SOT-23

BLC2425M10LS250 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
ECCN (US) EAR99
Channel Mode Enhancement
Number of Elements per Chip 1
Process Technology LDMOS
Maximum Drain Source Voltage (V) 65
Maximum Gate Source Voltage (V) 13
Maximum Gate Threshold Voltage (V) 2.68
Maximum VSWR 20
Maximum Gate Source Leakage Current (nA) 280
Maximum IDSS (uA) 2.8
Maximum Drain Source Resistance (mOhm) 40.5(Typ)@6.43V
Typical Forward Transconductance (S) 22.6
Output Power (W) 260(Typ)
Typical Power Gain (dB) 14.4
Maximum Frequency (MHz) 2500
Minimum Frequency (MHz) 2400
Typical Drain Efficiency (%) 68.7
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 225
Supplier Package SOT1270-1
Military No
Mounting Surface Mount
Package Height 4.01(Max)
Package Length 20.7(Max)
Package Width 9.91(Max)
PCB changed 3
Part Status Active
Type MOSFET
Pin Count 3
Configuration Single
Channel Type N
Mode of Operation Pulsed RF Class-AB
RoHS Status RoHS Compliant

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