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MRF8P23160WHSR3

MRF8P23160WHSR3

MRF8P23160WHSR3

NXP USA Inc.

RF MOSFET Transistors HV8 2.3GHz 160W NI780S-4

SOT-23

MRF8P23160WHSR3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Package / Case NI-780-4
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Published 2006
Part Status Obsolete
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 4
ECCN Code EAR99
Voltage - Rated 65V
HTS Code 8541.29.00.75
Subcategory FET General Purpose Power
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Frequency 2.32GHz
[email protected] Reflow Temperature-Max (s) 40
JESD-30 Code R-CDFP-F4
Operating Temperature (Max) 225°C
Number of Elements 1
Configuration SINGLE
Operating Mode ENHANCEMENT MODE
Case Connection SOURCE
Current - Test 600mA
Transistor Application AMPLIFIER
Transistor Type N-Channel
Gain 14.1dB
DS Breakdown Voltage-Min 65V
Power - Output 30W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 28V
RoHS Status ROHS3 Compliant

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