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BLC2425M10LS250Y

BLC2425M10LS250Y

BLC2425M10LS250Y

Ampleon

BLC2425M10LS250Y datasheet pdf and Transistors - FETs, MOSFETs - RF product details from Ampleon stock available on our website

SOT-23

BLC2425M10LS250Y Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case SOT-1270-1
Supplier Device Package SOT-1270-1
ECCN (US) EAR99
Channel Mode Enhancement
Number of Elements per Chip 1
Process Technology LDMOS
Maximum Drain Source Voltage (V) 65
Maximum Gate Source Voltage (V) 13
Maximum Gate Threshold Voltage (V) 2.68
Maximum VSWR 20
Maximum Gate Source Leakage Current (nA) 280
Maximum IDSS (uA) 2.8
Maximum Drain Source Resistance (mOhm) 40.5(Typ)@6.43V
Typical Forward Transconductance (S) 22.6
Output Power (W) 260(Typ)
Typical Power Gain (dB) 14.4
Maximum Frequency (MHz) 2500
Minimum Frequency (MHz) 2400
Typical Drain Efficiency (%) 68.7
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 225
AEC Qualified Unknown
Supplier Package SOT1270-1
Military No
Mounting Surface Mount
Package Height 4.01(Max)
Package Length 20.7(Max)
Package Width 9.91(Max)
PCB changed 3
Package Tape & Reel (TR)
Base Product Number BLC2425
Mfr Ampleon USA Inc.
Product Status Active
Packaging Tape and Reel
Series -
Part Status Active
Type MOSFET
Voltage - Rated 65 V
Current Rating (Amps) 2.8µA
Technology LDMOS
Frequency 2.4GHz ~ 2.5GHz
Pin Count 3
Configuration Single
Current - Test 100 mA
Gain 14.4dB
Channel Type N
Power - Output 250W
Noise Figure -
Voltage - Test 32 V
Mode of Operation Pulsed RF Class-AB

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