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BLP05H6350XR

BLP05H6350XR

BLP05H6350XR

Ampleon

BLP05H6350XR datasheet pdf and Transistors - FETs, MOSFETs - RF product details from Ampleon stock available on our website

SOT-23

BLP05H6350XR Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
ECCN (US) EAR99
HTS 8541.29.00.75
Channel Mode Enhancement
Number of Elements per Chip 2
Process Technology LDMOS
Maximum Drain Source Voltage (V) 135
Maximum Gate Source Voltage (V) 11
Maximum Gate Threshold Voltage (V) 2.33
Maximum VSWR 65
Maximum Gate Source Leakage Current (nA) 140
Maximum IDSS (uA) 1.4
Maximum Drain Source Resistance (mOhm) 290(Typ)@6.08V
Typical Input Capacitance @ Vds (pF) 161@50V
Typical Reverse Transfer Capacitance @ Vds (pF) 1.3@50V
Typical Output Capacitance @ Vds (pF) 53@50V
Output Power (W) 350
Typical Power Gain (dB) 27.5
Maximum Frequency (MHz) 600
Minimum Frequency (MHz) 10
Typical Drain Efficiency (%) 75
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 225
Supplier Package HSOP-F
Military No
Mounting Surface Mount
Package Height 3.6
Package Length 20.57
Package Width 9.96
PCB changed 4
Packaging Tape and Reel
Part Status Active
Pin Count 4
Configuration Dual Common Source
Channel Type N
Mode of Operation Pulsed RF
RoHS Status RoHS Compliant

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