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BLP10H605

BLP10H605

BLP10H605

Ampleon

BLP10H605 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from Ampleon stock available on our website

SOT-23

BLP10H605 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
ECCN (US) EAR99
Channel Mode Enhancement
Number of Elements per Chip 2
Process Technology LDMOS
Maximum Drain Source Voltage (V) 104
Maximum Gate Source Voltage (V) 11
Maximum Gate Threshold Voltage (V) 1.8(Typ)
Maximum VSWR 35
Maximum Gate Source Leakage Current (nA) 60
Maximum IDSS (uA) 0.6
Output Power (W) 5
Typical Power Gain (dB) 22.4
Maximum Frequency (MHz) 1400
Minimum Frequency (MHz) 10
Typical Drain Efficiency (%) 59.6(Max)
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 150
Supplier Package HVSON EP
Military No
Mounting Surface Mount
Package Height 0.82
Package Length 6
Package Width 5
PCB changed 12
Manufacturer Ampleon
Part Status Active
Reach Compliance Code unknown
Pin Count 12
Configuration Dual Common Source
Channel Type N
Mode of Operation CW
RoHS Status RoHS Compliant

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