BLP10H605

new-10%

Manufacturer part number:BLP10H605

Manufacturer:Ampleon

Description:BLP10H605 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from Ampleon stock available on our website

Case Package:SOT-23

Datasheet:BLP10H605 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
ECCN (US)	EAR99
Channel Mode	Enhancement
Number of Elements per Chip	2
Process Technology	LDMOS
Maximum Drain Source Voltage (V)	104
Maximum Gate Source Voltage (V)	11
Maximum Gate Threshold Voltage (V)	1.8(Typ)
Maximum VSWR	35
Maximum Gate Source Leakage Current (nA)	60
Maximum IDSS (uA)	0.6
Output Power (W)	5
Typical Power Gain (dB)	22.4
Maximum Frequency (MHz)	1400
Minimum Frequency (MHz)	10
Typical Drain Efficiency (%)	59.6(Max)
Minimum Operating Temperature (°C)	-65
Maximum Operating Temperature (°C)	150
Supplier Package	HVSON EP
Military	No
Mounting	Surface Mount
Package Height	0.82
Package Length	6
Package Width	5
PCB changed	12
Manufacturer	Ampleon
Part Status	Active
Reach Compliance Code	unknown
Pin Count	12
Configuration	Dual Common Source
Channel Type	N
Mode of Operation	CW
RoHS Status	RoHS Compliant