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BLF6G22LS-100,112

BLF6G22LS-100,112

BLF6G22LS-100,112

Ampleon USA Inc.

RF FET LDMOS 65V 18.2DB SOT502B

SOT-23

BLF6G22LS-100,112 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Package / Case SOT-502B
Surface Mount YES
Transistor Element Material SILICON
Packaging Tray
Published 2010
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Voltage - Rated 65V
Current Rating (Amps) 29A
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Frequency 2.11GHz~2.17GHz
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BLF6G22
Reference Standard IEC-60134
JESD-30 Code R-CDFP-F2
Number of Elements 1
Configuration SINGLE
Operating Mode ENHANCEMENT MODE
Case Connection SOURCE
Current - Test 950mA
Transistor Application AMPLIFIER
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Gain 18.2dB
Drain Current-Max (Abs) (ID) 29A
DS Breakdown Voltage-Min 65V
Power - Output 25W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 28V
RoHS Status Non-RoHS Compliant

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